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| SI7888DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.012 @ VGS = 10 V 0.020 @ VGS = 4.5 V ID (A) 15.7 12.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D Optimized for "High-Side" Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters PowerPAK SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: SI7888DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L= 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 15.7 Steady State Unit V 9.4 7.5 "50 A 1.5 20 20 A mJ 1.8 1.1 - 55 to 150 W _C ID IDM IS IAS EAS 12.5 4.1 5.0 PD TJ, Tstg 3.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient (MOSFET)a Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71876 S-31727--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 21 55 2.4 Maximum 25 70 3.0 Unit _C/W C/W 1 SI7888DP Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12.4 A VGS = 4.5 V, ID = 9.6 A VDS = 15 V, ID = 12.4 A IS = 2.6 A, VGS = 0 V 50 0.010 0.016 27 0.75 1.2 0.012 0.020 S V 0.80 2 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.6 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.2 VDS = 15 V, VGS = 5.0 V, ID = 12.4 A 8.7 2.4 3.5 1 10 11 24 10 50 1.5 20 20 50 20 75 ns W 10.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 50 Transfer Characteristics 40 I D - Drain Current (A) VGS = 10 thru 4 V I D - Drain Current (A) 40 30 30 20 3V 20 TC = 125_C 10 25_C - 55_C 10 0 0 1 2 2V 3 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71876 S-31727--Rev. B, 18-Aug-03 SI7888DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 1200 Capacitance r DS(on) - On-Resistance ( W ) 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 C - Capacitance (pF) 1000 Ciss 800 600 Coss Crss 200 400 0.005 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12.4 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12.4 A r DS(on) - On-Resistance (W) (Normalized) 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 12 14 16 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.05 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.04 I S - Source Current (A) 0.03 ID = 12.4 A 0.02 TJ = 25_C 0.01 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71876 S-31727--Rev. B, 18-Aug-03 www.vishay.com 3 SI7888DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 - 0.0 Power (W) 30 - 0.2 - 0.4 - 0.6 10 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) ID = 250 mA 50 Single Pulse Power 40 V GS(th) Variance (V) 20 Safe Operating Area 100 rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 10 dc 1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 55_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 1 Square Wave Pulse Duration (sec) 10 -1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71876 S-31727--Rev. B, 18-Aug-03 SI7888DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 71876 S-31727--Rev. B, 18-Aug-03 www.vishay.com 5 |
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